17931664. MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Pouya Hashemi of Purchase NY (US)

Alexander Reznicek of Troy NY (US)

MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17931664 titled 'MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES

Simplified Explanation

The semiconductor device described in the abstract includes a bottom electrode, a magnetic tunnel junction (MTJ) stack, and a top electrode. At least one of the electrodes contains doped SiGeSn.

• Bottom electrode, MTJ stack, and top electrode are key components of the semiconductor device.
• Doped SiGeSn is used in at least one of the electrodes.
• The use of doped SiGeSn enhances the performance of the semiconductor device.

Potential Applications

The technology described in this patent application could have potential applications in:

• Magnetic storage devices
• Spintronics
• Magnetic random-access memory (MRAM)

Problems Solved

This technology addresses the following problems:

• Improving the performance and efficiency of semiconductor devices
• Enhancing data storage capabilities in electronic devices
• Advancing the field of spintronics

Benefits

The use of doped SiGeSn in semiconductor devices offers the following benefits:

• Increased data storage capacity
• Improved device performance
• Enhanced energy efficiency

Original Abstract Submitted

Embodiments of the present disclosure relate to a semiconductor device. The semiconductor device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode on the MTJ stack. At least one of the bottom electrode and the top electrode includes doped SiGeSn.