17925222. THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)

THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE

Organization Name

BOE TECHNOLOGY GROUP CO., LTD.

Inventor(s)

Hehe Hu of Beijing (CN)

Dongfang Wang of Beijing (CN)

Fengjuan Liu of Beijing (CN)

Ce Ning of Beijing (CN)

Zhengliang Li of Beijing (CN)

Jiayu He of Beijing (CN)

Yan Qu of Beijing (CN)

Kun Zhao of Beijing (CN)

Jie Huang of Beijing (CN)

Liping Lei of Beijing (CN)

Yunsik Im of Beijing (CN)

Shunhang Zhang of Beijing (CN)

Nianqi Yao of Beijing (CN)

Feifei Li of Beijing (CN)

THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17925222 titled 'THIN FILM TRANSISTOR, MANUFACTURING METHOD FOR THE SAME, AND DISPLAY SUBSTRATE

The present disclosure introduces a Thin Film Transistor (TFT) technology with enhanced withstand voltage range.

• TFT includes a base substrate, a gate electrode, an active layer, a source electrode, and a drain electrode.
• The active layer is positioned next to the gate electrode, with overlapping projections onto the base substrate.
• The resistance between the gate electrode and the drain electrode is higher than that between the gate electrode and the source electrode.

Potential Applications:

• This technology can be used in the manufacturing of high-performance displays, such as LCD screens and OLED panels.

Problems Solved:

• The TFT technology addresses the need for increased withstand voltage range in electronic devices.

Benefits:

• Improved reliability and durability of electronic displays.
• Enhanced performance in high-voltage applications.

Commercial Applications:

• This technology can be applied in the production of televisions, computer monitors, and other electronic devices requiring high withstand voltage capabilities.

Questions about TFT Technology: 1. How does the resistance between the gate electrode and the drain electrode impact the overall performance of the TFT? 2. What are the specific advantages of having an increased withstand voltage range in electronic displays?

Frequently Updated Research: Ongoing research in the field of TFT technology focuses on further optimizing the design and materials used in thin film transistors to enhance their performance and reliability.

Original Abstract Submitted

The present disclosure provides a TFT, a manufacturing method and a display substrate, and it relates to the field of TFT technology. The TFT includes: a base substrate; a gate electrode arranged on the base substrate; an active layer arranged at a side of the gate electrode away from the base substrate, an orthogonal projection of the active layer onto the base substrate overlapping with an orthogonal projection of the gate electrode onto the base substrate; and a source electrode and a drain electrode arranged at a side of the active layer away from the base substrate and coupled to the active layer. A resistance between the gate electrode and the drain electrode is greater than a resistance between the gate electrode and the source electrode. According to the present disclosure, it is able to increase a withstand voltage range of the TFT.