17907839. METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR FABRICATING SAME, DISPLAY PANEL, AND DISPLAY DEVICE simplified abstract (BOE Technology Group Co., Ltd.)
METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR FABRICATING SAME, DISPLAY PANEL, AND DISPLAY DEVICE
Organization Name
BOE Technology Group Co., Ltd.
Inventor(s)
METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR FABRICATING SAME, DISPLAY PANEL, AND DISPLAY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17907839 titled 'METAL-OXIDE THIN-FILM TRANSISTOR AND METHOD FOR FABRICATING SAME, DISPLAY PANEL, AND DISPLAY DEVICE
The metal-oxide thin-film transistor described in the patent application consists of several layers including a gate, gate insulation layer, metal-oxide semiconductor layer, source electrode, drain electrode, and passivation layer on a base substrate. The source electrode and drain electrode have a laminated structure with a bulk metal layer and an electrode protection layer, which includes a metal or metal alloy, between the metal-oxide semiconductor layer and the bulk metal layer. Additionally, a metal-oxide layer is present between the electrode protection layer and the bulk metal layer.
- The metal-oxide thin-film transistor features a source electrode and drain electrode in a laminated structure, enhancing performance and durability.
- The electrode protection layer, made of metal or metal alloy, provides protection against environmental factors and improves the overall reliability of the transistor.
- The inclusion of a metal-oxide layer between the electrode protection layer and bulk metal layer further enhances the stability and functionality of the transistor.
Potential Applications: This technology can be utilized in various electronic devices such as displays, sensors, and integrated circuits where thin-film transistors are required.
Problems Solved: The innovation addresses issues related to the performance and reliability of metal-oxide thin-film transistors by introducing a protective electrode structure.
Benefits: Improved performance, enhanced durability, and increased reliability of thin-film transistors in electronic devices.
Commercial Applications: This technology can be applied in the manufacturing of consumer electronics, medical devices, and automotive displays, leading to more efficient and reliable products in the market.
Prior Art: Researchers can explore prior patents related to thin-film transistors, metal-oxide semiconductors, and electrode protection layers to understand the evolution of this technology.
Frequently Updated Research: Researchers are continuously studying the optimization of thin-film transistors for various applications, including advancements in materials and manufacturing processes.
Questions about Metal-Oxide Thin-Film Transistors: 1. How does the laminated structure of the source and drain electrodes improve the performance of the transistor? 2. What are the potential challenges in integrating this technology into different electronic devices?
Original Abstract Submitted
Provided is a metal-oxide thin-film transistor. The metal-oxide thin-film transistor includes a gate, a gate insulation layer, a metal-oxide semiconductor layer, a source electrode, a drain electrode, and a passivation layer that are successively disposed on a base substrate; wherein the source electrode and the drain electrode are both in a laminated structure, wherein the laminated structure of the source electrode or the drain electrode at least includes a bulk metal layer and an electrode protection layer; wherein the electrode protection layer includes a metal or a metal alloy; the electrode protection layer is at least disposed between the metal-oxide semiconductor layer and the bulk metal layer; wherein a metal-oxide layer is disposed between the electrode protection layer and the bulk metal layer.
