17899145. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF simplified abstract (Changxin Memory Technologies, Inc.)
Contents
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF
Organization Name
Changxin Memory Technologies, Inc.
Inventor(s)
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17899145 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME, MEMORY AND OPERATION METHOD THEREOF
Simplified Explanation
The patent application describes a semiconductor structure and a method for manufacturing it, as well as a memory and a method for operating it. Here are the key points:
- The semiconductor structure includes a substrate with active areas near its surface.
- A gate structure is located in a first structure layer on the substrate, forming a selective transistor with the active areas.
- An anti-fuse bit structure is located in a second structure layer on top of the first structure layer.
- The anti-fuse bit structure is connected to an active area of one selective transistor through a first connecting structure.
- The anti-fuse bit structure can be in a breakdown state or a non-breakdown state, representing different stored data.
Potential applications of this technology:
- Memory devices: The described semiconductor structure and memory method can be used in various memory devices, such as non-volatile memories or programmable logic devices.
- Integrated circuits: The structure and method can be applied in the manufacturing of integrated circuits, enabling the creation of more efficient and reliable circuits.
Problems solved by this technology:
- Data storage: The anti-fuse bit structure provides a reliable and efficient way to store data in memory devices.
- Integration challenges: The described structure and method help overcome challenges in integrating different components and layers in semiconductor manufacturing.
Benefits of this technology:
- Improved data reliability: The breakdown and non-breakdown states of the anti-fuse bit structure allow for reliable storage of data.
- Enhanced integration: The structure and method enable the integration of different components and layers, leading to more efficient and compact semiconductor devices.
- Simplified manufacturing process: The described method provides a simplified approach to manufacturing the semiconductor structure, reducing complexity and costs.
Original Abstract Submitted
Provided is a semiconductor structure and a method for manufacturing the same, a memory and a method for operating the same. The semiconductor includes a substrate having a plurality of active areas close to a surface of the substrate; a gate structure located in a first structure layer on the substrate, in which the gate structure and the active areas constitute a selective transistor; and an anti-fuse bit structure located in a second structure layer on the first structure layer, and connected with an active area of one selective transistor through a first connecting structure, in which a breakdown state and a non-breakdown state of the anti-fuse bit structure represent different stored data.
