17898827. SELF-SUPPORTING SGD STADIUM simplified abstract (Micron Technology, Inc.)

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SELF-SUPPORTING SGD STADIUM

Organization Name

Micron Technology, Inc.

Inventor(s)

Anna Maria Conti of Milano (IT)

Umberto Maria Meotto of Dietlikon (CH)

Domenico Tuzi of Balsorano (IT)

SELF-SUPPORTING SGD STADIUM - A simplified explanation of the abstract

This abstract first appeared for US patent application 17898827 titled 'SELF-SUPPORTING SGD STADIUM

Simplified Explanation

The patent application describes an apparatus with memory devices, including a three-dimensional memory device with levels of pillars supporting memory cells and select gate transistors.

  • Memory device has levels of pillars structured as a progression, with each pillar on one level extending vertically from a different pillar on the level below.
  • Select gate transistors are located within a SGD stadium, which is positioned within the progression of pillars.
  • SGD select lines are used to connect to the select gate transistors in the memory array.

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      1. Potential Applications
  • Data storage devices
  • High-performance computing systems
  • Artificial intelligence applications
      1. Problems Solved
  • Increasing memory density in a compact space
  • Improving memory access speed
  • Enhancing overall system performance
      1. Benefits
  • Higher memory capacity
  • Faster data access
  • Improved efficiency in data processing


Original Abstract Submitted

A variety of applications can include apparatus having memory devices, where at least one of the memory devices is a three-dimensional memory device having levels of pillars to support pillars of memory cells and one or more drain-end select gate (SGD) transistors of the memory array of the memory device. The levels of pillars are structured as a progression of pillars, where each pillar of one level is structured on and extending vertically from a different pillar of a level on which the one level is located. SGD select lines for coupling to the one or more SGD transistors are structured in a SGD stadium, where the SGD stadium is located within at least a portion of the progression of pillars.