17898233. MICROELECTRONIC DEVICES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract (Micron Technology, Inc.)
MICROELECTRONIC DEVICES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Organization Name
Inventor(s)
Fatma Arzum Simsek-ege of Boise ID (US)
MICROELECTRONIC DEVICES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17898233 titled 'MICROELECTRONIC DEVICES, RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS
Simplified Explanation
The patent application describes a microelectronic device with a vertical stack of memory cells, each comprising access devices, capacitors, and a conductive pillar structure. Global digit lines are used for communication within the device.
- Vertical stack of memory cells with access devices, capacitors, and conductive pillar structure
- First global digit lines vertically neighboring the memory cell stacks
- Second global digit lines horizontally interleaved with the first global digit lines
- Second global digit lines spaced further from the memory cell stacks than the first global digit lines
Potential Applications
- Data storage devices
- Embedded memory in microprocessors
- Mobile devices
Problems Solved
- Efficient data storage and retrieval
- Increased memory density
- Improved communication within the device
Benefits
- Higher performance
- Enhanced memory capacity
- More compact design
Original Abstract Submitted
A microelectronic device comprises a vertical stack of memory cells. Each vertical stack of memory cells comprises a vertical stack of access devices, a vertical stack of capacitors horizontally neighboring the vertical stack of access devices, and a conductive pillar structure in electrical communication with the vertical stack of access devices. The microelectronic device further comprises first global digit lines vertically neighboring the vertical stacks of memory cells, and second global digit lines horizontally interleaved with the first global digit lines in a horizontal direction, the second global digit lines vertically spaced from the vertical stacks of memory cells a greater distance than the first global digit lines. Related memory devices, electronic systems, and methods are also described.
