17898150. MICROELECTRONIC DEVICES INCLUDING CONTROL LOGIC CIRCUITRY OVERLYING MEMORY ARRAYS, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
MICROELECTRONIC DEVICES INCLUDING CONTROL LOGIC CIRCUITRY OVERLYING MEMORY ARRAYS, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
Organization Name
Inventor(s)
Fatma Arzum Simsek-ege of Boise ID (US)
MICROELECTRONIC DEVICES INCLUDING CONTROL LOGIC CIRCUITRY OVERLYING MEMORY ARRAYS, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17898150 titled 'MICROELECTRONIC DEVICES INCLUDING CONTROL LOGIC CIRCUITRY OVERLYING MEMORY ARRAYS, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS
Simplified Explanation
- Explanation:**
- The microelectronic device consists of array regions with memory cells, digit lines, and word lines. - Digit lines are connected to access devices and extend in one direction, while word lines extend in a perpendicular direction. - Sense amplifier sections with circuitry are positioned above the digit line exit regions. - Routing structures within the digit line exit regions connect the sense amplifier circuitry to the digit lines.
- Potential Applications:**
- Memory devices - Integrated circuits - Microprocessors
- Problems Solved:**
- Efficient data storage and retrieval - Improved performance of memory cells - Enhanced functionality of microelectronic devices
- Benefits:**
- Increased speed and reliability of data access - Higher memory density - Enhanced overall performance of electronic devices
Original Abstract Submitted
A microelectronic device is disclosed that incudes array regions individually comprising memory cells comprising access devices and storage node devices; digit lines coupled to the access devices that extend in a first direction; and word lines coupled to the access devices that extend in a second direction orthogonal to the first direction. Digit line exit regions horizontally alternate with the array regions in the first direction; sense amplifier sections comprising sense amplifier circuitry vertically overlie and horizontally overlapping the digit line exit regions; and routing structures within horizontal areas of the digit line exit regions, couple the sense amplifier circuitry of the sense amplifier sections to the digit lines.
