17897184. PADDING IN FLASH MEMORY BLOCKS simplified abstract (Micron Technology, Inc.)
Contents
PADDING IN FLASH MEMORY BLOCKS
Organization Name
Inventor(s)
Yu-Chung Lien of San Jose CA (US)
Zhenming Zhou of San Jose CA (US)
Murong Lang of San Jose CA (US)
PADDING IN FLASH MEMORY BLOCKS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17897184 titled 'PADDING IN FLASH MEMORY BLOCKS
Simplified Explanation
The method described in the patent application involves determining a boundary word line in a partial block of a flash memory device, where the partial block contains blank word lines after the boundary word line. The method also includes determining a single predefined level of pure data to write in at least one of the blank word lines after the boundary word line, and then writing the single predefined level of pure data to at least one of the blank word lines after the boundary word line.
- Determines a boundary word line in a partial block of a flash memory device
- Identifies blank word lines after the boundary word line
- Determines a single predefined level of pure data to write in at least one of the blank word lines
- Writes the single predefined level of pure data to at least one of the blank word lines
Potential Applications
- Data storage in flash memory devices
- Improving data writing efficiency in flash memory devices
Problems Solved
- Efficiently utilizing blank word lines in flash memory devices
- Optimizing data writing processes in flash memory devices
Benefits
- Increased data writing efficiency
- Enhanced performance of flash memory devices
- Improved utilization of storage space in flash memory devices
Original Abstract Submitted
A method includes determining a boundary word line in a partial block of a flash memory device, where the partial block includes blank word lines after the boundary word line; determining a single predefined level of pure data to write in at least one of the blank word lines after the boundary word line; and writing the single predefined level of pure data to at least one of the blank word lines after the boundary word line.
