17896039. CONDUCTIVE STRUCTURES simplified abstract (Micron Technology, Inc.)
Contents
CONDUCTIVE STRUCTURES
Organization Name
Inventor(s)
Daniel Billingsley of Meridian ID (US)
Marko Milojevic of Boise ID (US)
Sau Ha Cheung of Boise ID (US)
Luca Fumagalli of Rio Rancho NM (US)
CONDUCTIVE STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17896039 titled 'CONDUCTIVE STRUCTURES
Simplified Explanation
The patent application describes methods, apparatuses, and systems related to conductive structures.
- A conductive structure is described, which includes:
* A first conductive material made of a conductive metal nitride with a thickness of at least 0.5 nanometers. * A second conductive material made of a conductive metal, which is placed on a first surface of the first conductive material.
- Potential Applications:**
- This technology can be used in electronic devices such as sensors, transistors, and other semiconductor devices.
- It can also be applied in the manufacturing of integrated circuits and microprocessors.
- Problems Solved:**
- Provides improved conductivity and performance in electronic devices.
- Offers a more efficient and reliable method for creating conductive structures.
- Benefits:**
- Enhanced conductivity due to the use of conductive metal nitride.
- Increased durability and longevity of electronic devices.
- Improved efficiency and performance of semiconductor devices.
Original Abstract Submitted
Methods, apparatuses, and systems related to conductive structures are described. An example conductive structure includes a first conductive material including a conductive metal nitride, where the first conductive material has a thickness of at least 0.5 nanometers, and a second conductive material including a conductive metal, where the second conductive material is disposed on a first surface of the first conductive material.
