17887348. INDEPENDENT SENSING TIMES simplified abstract (Micron Technology, Inc.)

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INDEPENDENT SENSING TIMES

Organization Name

Micron Technology, Inc.

Inventor(s)

Yu-Chung Lien of San Jose CA (US)

Zhenming Zhou of San Jose CA (US)

INDEPENDENT SENSING TIMES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17887348 titled 'INDEPENDENT SENSING TIMES

Simplified Explanation

The method described in the patent application involves programming memory cells by applying two different voltage distributions in two separate passes, with the second pass using a longer sensing time than the first pass.

  • The method involves applying a first voltage distribution to memory cells in the first pass of the program operation.
  • A second voltage distribution is then applied to the same memory cells in the second pass of the program operation.
  • The first pass of the program operation uses a shorter sensing time compared to the second pass.
  • By using different sensing times for the two passes, the method aims to improve the efficiency and accuracy of programming memory cells.

Potential applications of this technology:

  • This method can be applied in non-volatile memory devices such as flash memory to improve programming efficiency.
  • It can also be used in other memory technologies where precise voltage distributions are required for programming memory cells.

Problems solved by this technology:

  • By using different sensing times for the two passes, the method addresses issues related to accuracy and efficiency in programming memory cells.
  • It helps in achieving more reliable programming results by optimizing the sensing time based on the voltage distribution applied.

Benefits of this technology:

  • Improved efficiency in programming memory cells by applying different voltage distributions in separate passes.
  • Enhanced accuracy in programming operations by using optimized sensing times for each pass.
  • Increased reliability of programming results in non-volatile memory devices.


Original Abstract Submitted

A method includes determining that a program operation includes a first pass to apply a first voltage distribution to a plurality of memory cells and a second pass to apply a second voltage distribution to the plurality of memory cells, performing the first pass of the program operation using a first sensing time, and performing the second pass of the program operation using a second sensing time during the second pass of the program operation, where the first sensing time is shorter than the second sensing time.

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