17886652. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
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SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17886652 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor memory device that includes active regions on a substrate. Word lines are extended in one direction on the active regions, and bit line structures are placed on the word lines. Each bit line structure consists of a contact portion connected to a first impurity region of an active region, and a line portion extending in a different direction. Contact plugs are positioned between the bit line structures and connected to second impurity regions of the active regions. Connection patterns link the contact plugs to the second impurity regions, with each pattern having a concave surface facing the contact portion and a convex surface opposite to the concave surface.
- The semiconductor memory device includes active regions, word lines, bit line structures, contact plugs, and connection patterns.
- Word lines are extended in one direction on the active regions.
- Bit line structures are placed on the word lines.
- Each bit line structure consists of a contact portion connected to a first impurity region of an active region and a line portion extending in a different direction.
- Contact plugs are positioned between the bit line structures and connected to second impurity regions of the active regions.
- Connection patterns link the contact plugs to the second impurity regions.
- Each connection pattern has a concave surface facing the contact portion and a convex surface opposite to the concave surface.
Potential Applications
- Semiconductor memory devices
- Integrated circuits
- Electronics manufacturing
Problems Solved
- Efficient connection of bit line structures to impurity regions
- Improved performance and reliability of semiconductor memory devices
Benefits
- Enhanced functionality and performance of semiconductor memory devices
- Simplified manufacturing process
- Increased reliability and durability of the memory device
Original Abstract Submitted
A semiconductor memory device may include a substrate including active regions. Word lines may be on the active regions and may be extended in a first direction. Bit line structures may be on the word lines, and each of the bit line structures may include a contact portion, which is connected to a first impurity region of an active region, and a line portion, which is on the contact portion and which extends in a second direction. Contact plugs may be between the bit line structures and may be connected to respective second impurity regions of the active regions. Connection patterns may connect the contact plugs to the second impurity regions. Each of the connection patterns may include a first concave surface that faces the contact portion and a second convex surface that is opposite to the first surface.
