17881861. HOUSING OF ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
HOUSING OF ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Hyunsoo Kim of Gyeonggi-do (KR)
Hyesun Park of Gyeonggi-do (KR)
Heesung Lee of Gyeonggi-do (KR)
Youngjun Heo of Gyeonggi-do (KR)
Youngsoo Jung of Gyeonggi-do (KR)
HOUSING OF ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17881861 titled 'HOUSING OF ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a housing for an electronic device that has specific surface characteristics. The metal frame of the housing has a gloss value between 1 and 10 gloss units (Gu). The surface also has a maximum height of irregularities between 0.1 μm and 2.3 μm, and a maximum depth of valleys between these irregularities between 0.1 μm and 1.8 μm. Additionally, there are between 90 to 200 irregularities per square centimeter on the surface.
- Gloss value of 1-10 Gu
- Maximum height of irregularities: 0.1 μm - 2.3 μm
- Maximum depth of valleys: 0.1 μm - 1.8 μm
- Number of irregularities per unit area: 90-200/cm²
Potential Applications
- Electronic devices such as smartphones, tablets, laptops, etc.
- Consumer electronics with metal housings
Problems Solved
- Provides a specific surface texture and appearance for electronic device housings
- Enhances the aesthetic appeal of the device
Benefits
- Improved visual appeal with a specific gloss value and surface irregularities
- Differentiates the device from competitors
- Provides a unique and premium feel to the device
Original Abstract Submitted
According to an embodiment, a housing of an electronic device comprises: a metal frame, wherein a surface of the metal frame has: a gloss value of 1 gloss unit (Gu) to 10 Gu, and a maximum height of a plurality of irregularities disposed on the surface in a range between 0.1 μm to 2.3 μm, and a maximum depth of valleys between the plurality of irregularities in a range between 0.1 μm to 1.8 μm, and a number of the plurality of irregularities per unit area of 1 cmin a range between 90 to 200.
