17877613. MEMORY CELL READ OPERATION TECHNIQUES simplified abstract (Micron Technology, Inc.)
Contents
MEMORY CELL READ OPERATION TECHNIQUES
Organization Name
Inventor(s)
Riccardo Muzzetto of Arcore (MB) (IT)
Francesco Mastroianni of Melzo (MI) (IT)
Ferdinando Bedeschi of Biassono (MB) (IT)
Nevil N. Gajera of Meridian ID (US)
MEMORY CELL READ OPERATION TECHNIQUES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17877613 titled 'MEMORY CELL READ OPERATION TECHNIQUES
Simplified Explanation
Methods, systems, and devices for memory cell read operation techniques are described in this patent application. The memory device is capable of determining a starting voltage for the second phase of a read operation for a set of memory cells, which may have a different magnitude than the starting voltage of the first phase. The ending voltage of the first phase is used to determine the starting voltage for the second phase. In some cases, the starting voltage for the second phase may be a voltage offset difference from the ending voltage of the first phase. During the second phase of the read operation, the memory device applies a sequence of voltages to the set of memory cells based on the determined starting voltage.
- The patent application describes a method for determining the starting voltage for the second phase of a read operation in memory cells.
- The starting voltage for the second phase is determined based on the ending voltage of the first phase.
- The starting voltage for the second phase may be a voltage offset difference from the ending voltage of the first phase.
- A sequence of voltages is applied to the memory cells during the second phase of the read operation.
Potential applications of this technology:
- Memory devices and systems that require efficient and accurate read operations.
- Semiconductor industry for improving memory cell read operations in various devices.
- Data storage systems that rely on memory cells for storing and retrieving information.
Problems solved by this technology:
- Inaccurate or inefficient read operations in memory cells.
- Difficulty in determining the appropriate starting voltage for the second phase of a read operation.
- Inconsistent performance of memory devices during read operations.
Benefits of this technology:
- Improved accuracy and efficiency in memory cell read operations.
- Enhanced performance and reliability of memory devices.
- Simplified determination of starting voltage for the second phase of a read operation.
Original Abstract Submitted
Methods, systems, and devices for memory cell read operation techniques are described. A memory device may determine a starting voltage for a second phase of a read operation for a set of memory cells which may have a different magnitude than a magnitude of a starting voltage of a first phase of the read operation. For example, the memory device may use an ending voltage of the first phase to determine the starting voltage for the second phase. In some cases, the starting voltage for the second phase may correspond to a difference of a voltage offset and the ending voltage of the first phase. As part of the second phase of the read operation, the memory device may apply a sequence of voltages to the set of memory cells in accordance with the determined starting voltage of the second phase.
