17868900. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17868900 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes a cell area and a peripheral circuit area. The cell area consists of multiple word lines, ground select lines, and channel structures, while the peripheral circuit area controls the cell area.
- The cell area includes stacked word lines and ground select lines on a substrate.
- Channel structures pass through the word lines and ground select lines.
- The peripheral circuits in the peripheral circuit area control the cell area.
- During the first program time, the peripheral circuits input a first ground select bias voltage to the ground select line of a selected program word line.
- During the second program time, the peripheral circuits input a second ground select bias voltage to the ground select line, which has a different magnitude from the first ground select bias voltage.
Potential applications of this technology:
- Memory devices: The semiconductor device can be used in memory devices such as flash memory or DRAM.
- Data storage: The technology can be applied in devices that require high-density data storage, such as solid-state drives or memory cards.
- Computing systems: The semiconductor device can be integrated into various computing systems to enhance their performance and storage capabilities.
Problems solved by this technology:
- Improved programming efficiency: The use of different ground select bias voltages during different program times allows for more efficient programming of the selected word lines.
- Enhanced memory performance: The technology enables faster and more reliable programming of memory cells, leading to improved overall memory performance.
- Increased storage density: The stacked word lines and ground select lines, along with the channel structures, enable higher storage density in the semiconductor device.
Benefits of this technology:
- Faster programming: The use of different ground select bias voltages speeds up the programming process, reducing the time required for data storage operations.
- Higher reliability: The technology ensures more reliable programming of memory cells, minimizing the risk of data loss or corruption.
- Increased storage capacity: The stacked word lines and ground select lines, along with the channel structures, allow for higher storage capacity in the semiconductor device, enabling larger amounts of data to be stored.
Original Abstract Submitted
A semiconductor device includes a cell area including a plurality of word lines stacked on a substrate, at least one ground select line between the plurality of word lines and substrate, and a plurality of channel structures passing through the plurality of word lines and the at least one ground select line, and a peripheral circuit area including peripheral circuits controlling the cell area. The peripheral circuits input a first ground select bias voltage to the at least one ground select line during a first program time to a program word line selected from among the plurality of word lines, and input a second ground select bias voltage having a magnitude different from the first ground select bias voltage to the at least one ground select line during a second program time, the second program voltage different from the first program voltage.
