17865773. PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hyunjoo Lee of Suwon-si (KR)

Sang Ki Nam of Seongnam-si (KR)

Young Hyun Jo of Suwon-si (KR)

PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17865773 titled 'PLASMA EDGE RING, PLASMA ETCHING APPARATUS INCLUDING THE SAME, AND PLASMA ETCHING METHOD USING THE SAME

Simplified Explanation

The patent application describes plasma edge rings, plasma etching apparatuses, and plasma etching methods. The plasma etching apparatus includes a plasma electrode, a plasma edge ring, and a guide electrode.

  • The plasma edge ring has a placement hole and a recess on its inner lateral surface.
  • The placement hole vertically penetrates the center of the plasma edge ring.
  • The recess is outwardly recessed from the inner lateral surface.

Potential Applications:

  • Semiconductor manufacturing
  • Microelectronics fabrication
  • Nanotechnology research

Problems Solved:

  • Improved plasma etching efficiency
  • Enhanced uniformity in etching process
  • Reduction in defects and damage to the etching target

Benefits:

  • Higher precision and accuracy in plasma etching
  • Increased productivity and throughput in manufacturing processes
  • Cost savings through improved process efficiency


Original Abstract Submitted

Disclosed are plasma edge rings, plasma etching apparatuses, and plasma etching methods. The plasma etching apparatus comprises a plasma electrode, a plasma edge ring on the plasma electrode, and a guide electrode outside an etching target on the plasma electrode. The plasma edge ring provides a placement hole that vertically penetrates a center of the plasma edge ring, and a recess on a portion of an inner lateral surface that defines the placement hole. The recess is outwardly recessed from the inner lateral surface.