17864938. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Suk Shin of Suwon-si (KR)
Soon Wook Jung of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17864938 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with a unique active pattern and gate structure. Here are the key points:
- The semiconductor device has an active pattern consisting of a lower pattern and sheet patterns.
- The sheet patterns are spaced apart from the lower pattern and have upper and lower surfaces.
- A gate structure is placed on the lower pattern and surrounds each sheet pattern.
- The gate structure includes a gate electrode and a gate insulating film.
- A source/drain pattern is located on at least one side of the gate structure.
- Inter-gate structures are present between the lower pattern and the lowermost sheet pattern, as well as between two sheet patterns.
- The gate structure contacts the source/drain pattern.
- The gate insulating film has a horizontal portion with a certain thickness and a vertical portion with a different thickness.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Provides a unique active pattern and gate structure for semiconductor devices.
- Improves the performance and functionality of semiconductor devices.
- Enhances the integration and miniaturization of electronic components.
Benefits of this technology:
- Enables efficient and precise control of the semiconductor device.
- Enhances the overall performance and reliability of the device.
- Facilitates the production of smaller and more advanced electronic devices.
Original Abstract Submitted
A semiconductor device includes an active pattern which includes a lower pattern extending in a first direction, and sheet patterns spaced apart from the lower pattern in a second direction perpendicular to an upper surface of the lower pattern, each sheet pattern including an upper surface and a lower surface, a gate structure disposed on the lower pattern and including a gate electrode and a gate insulating film, the gate electrode and the gate insulating film surrounding each sheet pattern, and a source/drain pattern disposed on at least one side of the gate structure. The gate structure includes inter-gate structures that are disposed between the lower pattern and a lowermost sheet pattern and between two sheet patterns, and contacts the source/drain pattern. The gate insulating film includes a horizontal portion with a first thickness, and a first vertical portion with a second thickness different from the first thickness.
