17864716. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Sunghwan Kim of Hwaseong-si (KR)
Junki Park of Hwaseong-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17864716 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract describes an integrated circuit device that includes a conductive region on a substrate, an insulating structure with a contact hole, a local capping pattern with an outer sidewall in contact with the inner wall of the contact hole, and a conductive plug passing through the insulating structure and contact hole.
- The conductive region is placed on a substrate.
- An insulating structure is added, which includes a contact hole extending from the conductive region in a vertical direction.
- A local capping pattern is introduced, with an outer sidewall in contact with the upper portion of the contact hole's inner wall.
- The local capping pattern's inner sidewall faces the inside of the contact hole and gradually widens horizontally away from the substrate.
- A conductive plug is inserted through the insulating structure and contact hole in the vertical direction.
- The conductive plug has a lower sidewall in contact with the insulating structure and an upper sidewall in contact with the local capping pattern.
- The conductive plug includes a first metal.
Potential applications of this technology:
- Integrated circuit devices manufacturing.
- Semiconductor industry.
- Electronics manufacturing.
Problems solved by this technology:
- Provides a reliable and efficient method for creating a conductive plug in an integrated circuit device.
- Ensures proper contact between the conductive plug and the insulating structure.
Benefits of this technology:
- Improved performance and functionality of integrated circuit devices.
- Enhanced reliability and durability of conductive plugs.
- Simplified manufacturing process for integrated circuit devices.
Original Abstract Submitted
An integrated circuit device includes a conductive region disposed on a substrate, an insulating structure including a contact hole disposed in the conductive region and extending from the conductive region in a vertical direction, a local capping pattern having an outer sidewall in contact with an upper portion of an inner wall of the contact hole and an inner sidewall facing an inside of the contact hole and having a width gradually increasing in a horizontal direction away from the substrate, and a conductive plug passing through the insulating structure through the contact hole in the vertical direction, having a lower sidewall in contact with the insulating structure and an upper sidewall in contact with the local capping pattern, and including a first metal.
