17862082. DIFFERENTIAL STROBE FAULT INDICATION simplified abstract (Micron Technology, Inc.)
Contents
DIFFERENTIAL STROBE FAULT INDICATION
Organization Name
Inventor(s)
Scott E. Schaefer of Boise ID (US)
DIFFERENTIAL STROBE FAULT INDICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17862082 titled 'DIFFERENTIAL STROBE FAULT INDICATION
Simplified Explanation
The patent application describes methods, systems, and devices for indicating faults in memory devices using a read strobe signal. The read strobe signal can be a true RDQS signal or a complement RDQS signal. The memory device can indicate a fault based on characteristics of the read strobe signal, such as its pattern, voltage level, or the difference between two read strobe signals. The host device can instruct the memory device on which characteristic to use for fault indication.
- Memory devices can indicate faults using a read strobe signal
- The read strobe signal can be a true RDQS or a complement RDQS signal
- Fault indication can be based on characteristics of the read strobe signal
- Characteristics can include the pattern, voltage level, or difference between two read strobe signals
- The host device can instruct the memory device on which characteristic to use for fault indication
Potential Applications
- Memory devices in various electronic devices
- Fault detection and indication in memory systems
Problems Solved
- Efficient fault detection in memory devices
- Clear indication of faults using read strobe signals
Benefits
- Improved reliability of memory devices
- Quick and accurate fault detection
- Simplified fault indication process
Original Abstract Submitted
Methods, systems, and devices for differential strobe fault indication are described. A memory device may be configured to indicate a fault using a read strobe signal. The read strobe signal may be a read data strobe (RDQS) signal, such as a true RDQS (RDQS_t) signal or a complement RDQS (RDQS_c) signal. In some examples, the memory device may indicate the fault based on a characteristic of the read strobe signal, such as a pattern of the read strobe signal, a voltage level of the read strobe signal, a difference between a first read strobe signal and a second read strobe signal, or any combination thereof. In some examples, a host device may indicate to the memory device which characteristic of the read strobe signal the memory device is to use to indicate the fault.
