17861479. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hyo-Sub Kim of Seoul (KR)

Junhyeok Ahn of Suwon-si (KR)

Myeong-Dong Lee of Seoul (KR)

Hui-Jung Kim of Seongnam-si (KR)

Kiseok Lee of Hwaseong-si (KR)

Jihun Lee of Hwaseong-si (KR)

Yoosang Hwang of Yongin-si (KR)

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17861479 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor memory device and a method of fabricating it. The device includes a first impurity region in a substrate, a first bit line connected to the first impurity region, a bit-line contact between the first bit line and the first impurity region, and a contact ohmic layer between the bit-line contact and the first impurity region. The width of the bottom surface of the bit-line contact is greater than the width of the bottom surface of the contact ohmic layer.

  • The patent application describes a new design for a semiconductor memory device.
  • The device includes a first impurity region in a substrate, a first bit line, a bit-line contact, and a contact ohmic layer.
  • The width of the bottom surface of the bit-line contact is greater than the width of the bottom surface of the contact ohmic layer.

Potential applications of this technology:

  • Semiconductor memory devices used in various electronic devices such as computers, smartphones, and tablets.
  • Memory devices used in data storage systems, servers, and cloud computing.

Problems solved by this technology:

  • Improved performance and reliability of semiconductor memory devices.
  • Enhanced electrical connectivity between the bit line and the impurity region.

Benefits of this technology:

  • Higher data transfer rates and faster access times in memory devices.
  • Reduced power consumption and improved energy efficiency.
  • Increased durability and longer lifespan of memory devices.


Original Abstract Submitted

A semiconductor memory device and a method of fabricating a semiconductor memory device, the device including a first impurity region in a substrate; a first bit line that crosses over the substrate and is connected to the first impurity region; a bit-line contact between the first bit line and the first impurity region; and a contact ohmic layer between the bit-line contact and the first impurity region, wherein a width of a bottom surface of the bit-line contact is greater than a width of a bottom surface of the contact ohmic layer.