17861479. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Hui-Jung Kim of Seongnam-si (KR)
Kiseok Lee of Hwaseong-si (KR)
Yoosang Hwang of Yongin-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17861479 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor memory device and a method of fabricating it. The device includes a first impurity region in a substrate, a first bit line connected to the first impurity region, a bit-line contact between the first bit line and the first impurity region, and a contact ohmic layer between the bit-line contact and the first impurity region. The width of the bottom surface of the bit-line contact is greater than the width of the bottom surface of the contact ohmic layer.
- The patent application describes a new design for a semiconductor memory device.
- The device includes a first impurity region in a substrate, a first bit line, a bit-line contact, and a contact ohmic layer.
- The width of the bottom surface of the bit-line contact is greater than the width of the bottom surface of the contact ohmic layer.
Potential applications of this technology:
- Semiconductor memory devices used in various electronic devices such as computers, smartphones, and tablets.
- Memory devices used in data storage systems, servers, and cloud computing.
Problems solved by this technology:
- Improved performance and reliability of semiconductor memory devices.
- Enhanced electrical connectivity between the bit line and the impurity region.
Benefits of this technology:
- Higher data transfer rates and faster access times in memory devices.
- Reduced power consumption and improved energy efficiency.
- Increased durability and longer lifespan of memory devices.
Original Abstract Submitted
A semiconductor memory device and a method of fabricating a semiconductor memory device, the device including a first impurity region in a substrate; a first bit line that crosses over the substrate and is connected to the first impurity region; a bit-line contact between the first bit line and the first impurity region; and a contact ohmic layer between the bit-line contact and the first impurity region, wherein a width of a bottom surface of the bit-line contact is greater than a width of a bottom surface of the contact ohmic layer.
