17852028. SELECTIVE BOTTOMLESS GRAPHENE LINED INTERCONNECTS simplified abstract (Intel Corporation)

From WikiPatents
Jump to navigation Jump to search

SELECTIVE BOTTOMLESS GRAPHENE LINED INTERCONNECTS

Organization Name

Intel Corporation

Inventor(s)

Nita Chandrasekhar of Portland OR (US)

Vishal Tiwari of Hillsboro OR (US)

AKM Shaestagir Chowdhury of Portland OR (US)

SELECTIVE BOTTOMLESS GRAPHENE LINED INTERCONNECTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17852028 titled 'SELECTIVE BOTTOMLESS GRAPHENE LINED INTERCONNECTS

Simplified Explanation

The abstract of this patent application describes integrated circuit structures and methods of forming them. The structure includes a dielectric layer with a first and second surface, and an opening through the layer. The opening is defined by sidewalls. A graphene liner is in contact with the first surface of the dielectric layer and the sidewalls of the opening. A conductive material fills the remaining part of the opening.

  • Integrated circuit structure with a dielectric layer and an opening
  • Graphene liner in contact with the dielectric layer and opening sidewalls
  • Conductive material fills the rest of the opening

Potential Applications

  • Integrated circuits
  • Semiconductor devices
  • Electronics manufacturing

Problems Solved

  • Improved integration of graphene in integrated circuit structures
  • Enhanced conductivity and performance of the integrated circuit

Benefits

  • Increased efficiency and performance of integrated circuits
  • Improved reliability and durability of semiconductor devices
  • Enhanced manufacturing processes for electronics


Original Abstract Submitted

Embodiments disclosed herein include integrated circuit structures and methods of forming such structures. In an embodiment, an integrated circuit structure comprises a dielectric layer with a first surface and a second surface, and an opening through the dielectric layer. In an embodiment, the opening is defined by sidewalls. In an embodiment, a graphene liner contacts the first surface of the dielectric layer and the sidewalls of the opening. In an embodiment, a conductive material at least partially fills a remainder of the opening.