17852016. 2D LAYERED GATE OXIDE simplified abstract (Intel Corporation)

2D LAYERED GATE OXIDE

Organization Name

Intel Corporation

Inventor(s)

Chelsey Dorow of Portland OR (US)

Sudarat Lee of Hillsboro OR (US)

Kevin P. O'brien of Portland OR (US)

Ande Kitamura of Portland OR (US)

Ashish Verma Penumatcha of Beaverton OR (US)

Carl H. Naylor of Portland OR (US)

Kirby Maxey of Hillsboro OR (US)

Scott B. Clendenning of Portland OR (US)

Uygar E. Avci of Portland OR (US)

Chia-Ching Lin of Portland OR (US)

2D LAYERED GATE OXIDE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17852016 titled '2D LAYERED GATE OXIDE

Simplified Explanation

The abstract of this patent application describes a transistor device that includes a transition metal dichalcogenide (TMD) channel, a two-dimensional (2D) dielectric layer over the TMD channel, and a gate metal layer over the 2D dielectric.

• The transistor device includes a TMD channel.
• The TMD channel is a type of material used in the construction of the transistor.
• The transistor device also includes a 2D dielectric layer.
• The 2D dielectric layer is positioned over the TMD channel.
• The transistor device further includes a gate metal layer.
• The gate metal layer is positioned over the 2D dielectric layer.

Potential Applications

• This transistor device can be used in various electronic devices, such as smartphones, tablets, and computers.
• It can be utilized in integrated circuits and microprocessors.
• The technology can be applied in the field of telecommunications and wireless communication devices.

Problems Solved

• The transistor device addresses the need for improved performance and efficiency in electronic devices.
• It solves the problem of achieving higher speeds and lower power consumption in integrated circuits.
• The technology helps overcome limitations of traditional transistor designs.

Benefits

• The use of a TMD channel and 2D dielectric layer can enhance the performance of the transistor device.
• It can lead to faster switching speeds and reduced power consumption.
• The technology offers potential for smaller and more efficient electronic devices.

Original Abstract Submitted

Embodiments disclosed herein include transistor devices. In an embodiment, the transistor comprises a transition metal dichalcogenide (TMD) channel. In an embodiment, a two dimensional (2D) dielectric is over the TMD channel. In an embodiment, a gate metal is over the 2D dielectric.