17847559. GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION simplified abstract (Intel Corporation)

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GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION

Organization Name

Intel Corporation

Inventor(s)

Ashish Agrawal of Hillsboro OR (US)

Anand Murthy of Portland OR (US)

Jack T. Kavalieros of Portland OR (US)

Rajat K. Paul of Portland OR (US)

Susmita Ghose of Hillsboro OR (US)

Seung Hoon Sung of Portland OR (US)

GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17847559 titled 'GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION

Simplified Explanation

The patent application describes semiconductor devices on a substrate with a different crystallographic surface orientation. This includes gate-all-around transistors such as nanoribbon and nanosheet transistors, as well as forksheet transistors.

  • The substrate used has a (110) crystallographic surface orientation.
  • The growth of alternating silicon germanium (SiGe) or germanium tin (GeSn) and silicon (Si) semiconductor layers is based on this substrate.
  • P-channel transistors are formed using SiGe or GeSn nanoribbons, while n-channel transistors are formed from Si nanoribbons.
  • The crystallographic surface orientation of the SiGe or GeSn nanoribbons matches that of the substrate, resulting in higher hole mobility and improved device performance.

Potential Applications

  • This technology can be applied in the development of advanced semiconductor devices.
  • It can be used in the manufacturing of gate-all-around transistors, such as nanoribbon and nanosheet transistors.
  • The technology can also be utilized in the production of forksheet transistors.

Problems Solved

  • The use of a substrate with an alternative crystallographic surface orientation solves the problem of limited hole mobility in traditional semiconductor devices.
  • It addresses the need for improved device performance and efficiency in semiconductor technology.

Benefits

  • The technology allows for higher hole mobility across SiGe or GeSn nanoribbons, leading to improved device performance.
  • It enables the growth of alternating semiconductor layers on the substrate, providing flexibility in transistor design and functionality.
  • The use of different crystallographic surface orientations expands the possibilities for advanced semiconductor device development.


Original Abstract Submitted

Semiconductor devices on a substrate with an alternative crystallographic surface orientation. Example devices includes gate-all-around (e.g., nanoribbon and nanosheet) and forksheet transistors. In an example, a substrate having a (110) crystallographic surface orientation forms the basis for the growth of alternating silicon germanium (SiGe) or germanium tin (GeSn) and silicon (Si) semiconductor layers. P-channel transistors may be formed using SiGe or GeSn nanoribbons while n-channel transistors are formed from Si nanoribbons. The crystallographic surface orientation of the SiGe or GeSn nanoribbons will reflect the same crystallographic surface orientation of the substrate, which leads to a higher hole mobility across the SiGe or GeSn nanoribbons and improved device performance.

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