17846158. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Min Hee Cho of Suwon-si (KR)

Dong Il Bae of Seongnam-si (KR)

Won Sok Lee of Suwon-si (KR)

Yong Seok Kim of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17846158 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor memory device that consists of a cell area and a peripheral area. It includes a base insulating layer, a first semiconductor substrate, an active pattern, a first conductive line, a capacitor structure, a first circuit element, and a second conductive line.

• The base insulating layer has two surfaces, one in the cell area and one in the peripheral area.
• The first semiconductor substrate also has two surfaces, one in the peripheral area and one in the cell area.
• The active pattern is located on the first surface of the base insulating layer and extends vertically.
• The first conductive line is positioned on one side of the active pattern and extends in a specific direction.
• The capacitor structure is built on top of the active pattern.
• The first circuit element is located on the second surface of the first semiconductor substrate.
• The second conductive line extends in a direction that intersects the first direction and is connected to the capacitor structure through the active pattern.

Potential applications of this technology:

• Memory devices: This semiconductor memory device can be used in various memory applications, such as computer systems, smartphones, and other electronic devices that require data storage.

Problems solved by this technology:

• Efficient memory design: The described memory device allows for a compact and efficient design by utilizing the vertical extension of the active pattern to connect the capacitor structure to the second conductive line.

Benefits of this technology:

• Space-saving: The vertical extension of the active pattern reduces the footprint of the memory device, making it more space-efficient.
• Improved performance: The compact design and efficient connection between components can lead to improved performance and faster data access in memory devices.

Original Abstract Submitted

A semiconductor memory device includes a cell area and a peripheral area, a base insulating layer including opposed first front and rear surfaces in the cell area, a first semiconductor substrate including opposed second front and rear surfaces in the peripheral area, an active pattern on the first front surface, a first conductive line extending in a first direction on a side of the active pattern, a capacitor structure on the active pattern, a first circuit element on the second front surface, and a second conductive line extending in a second direction intersecting the first direction on the first rear surface and the second rear surface. The active pattern extends in a vertical direction intersecting the first direction and the second direction to electrically connect the second conductive line to the capacitor structure.