17846158. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Min Hee Cho of Suwon-si (KR)

Dong Il Bae of Seongnam-si (KR)

Won Sok Lee of Suwon-si (KR)

Yong Seok Kim of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17846158 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor memory device that consists of a cell area and a peripheral area. It includes a base insulating layer, a first semiconductor substrate, an active pattern, a first conductive line, a capacitor structure, a first circuit element, and a second conductive line.

  • The base insulating layer has two surfaces, one in the cell area and one in the peripheral area.
  • The first semiconductor substrate also has two surfaces, one in the peripheral area and one in the cell area.
  • The active pattern is located on the first surface of the base insulating layer and extends vertically.
  • The first conductive line is positioned on one side of the active pattern and extends in a specific direction.
  • The capacitor structure is built on top of the active pattern.
  • The first circuit element is located on the second surface of the first semiconductor substrate.
  • The second conductive line extends in a direction that intersects the first direction and is connected to the capacitor structure through the active pattern.

Potential applications of this technology:

  • Memory devices: This semiconductor memory device can be used in various memory applications, such as computer systems, smartphones, and other electronic devices that require data storage.

Problems solved by this technology:

  • Efficient memory design: The described memory device allows for a compact and efficient design by utilizing the vertical extension of the active pattern to connect the capacitor structure to the second conductive line.

Benefits of this technology:

  • Space-saving: The vertical extension of the active pattern reduces the footprint of the memory device, making it more space-efficient.
  • Improved performance: The compact design and efficient connection between components can lead to improved performance and faster data access in memory devices.


Original Abstract Submitted

A semiconductor memory device includes a cell area and a peripheral area, a base insulating layer including opposed first front and rear surfaces in the cell area, a first semiconductor substrate including opposed second front and rear surfaces in the peripheral area, an active pattern on the first front surface, a first conductive line extending in a first direction on a side of the active pattern, a capacitor structure on the active pattern, a first circuit element on the second front surface, and a second conductive line extending in a second direction intersecting the first direction on the first rear surface and the second rear surface. The active pattern extends in a vertical direction intersecting the first direction and the second direction to electrically connect the second conductive line to the capacitor structure.