17838726. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE
Organization Name
Inventor(s)
HSIH-YANG Chiu of TAOYUAN CITY (TW)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17838726 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH PROGRAMMABLE FEATURE
Simplified Explanation
The present application describes a method for fabricating a semiconductor device. The method involves several steps, including the formation of insulative films, the implantation of dopants, and the deposition of capping layers. The key steps are as follows:
- Forming a first insulative film on a substrate
- Forming a first electrode on the first insulative film
- Implanting dopants in the substrate to create first impurity regions on either side of the first electrode
- Depositing a capping layer to cover the first electrode
- Forming a second insulative film on exposed portions of the substrate
- Forming a second electrode over the capping layer and portions of the second insulative film
- Removing portions of the second insulative film on either side of the second electrode
- Implanting dopants in exposed portions of the substrate to create second impurity regions
Potential applications of this technology:
- Semiconductor devices, such as transistors, diodes, or integrated circuits, can benefit from this fabrication method.
- The method can be used in the production of various electronic devices, including smartphones, computers, and televisions.
Problems solved by this technology:
- The method provides a reliable and efficient way to fabricate semiconductor devices.
- It allows for precise control of impurity regions, which is crucial for the performance and functionality of the devices.
Benefits of this technology:
- The method offers improved performance and functionality of semiconductor devices.
- It enables the production of devices with higher integration density and smaller form factors.
- The fabrication process is more cost-effective and time-efficient compared to traditional methods.
Original Abstract Submitted
The present application provides a method of fabricating a semiconductor device. The method includes steps of forming a first insulative film on a substrate; forming a first electrode on the first insulative film; implanting dopants in the substrate to form a plurality of first impurity regions on either side of the first electrode; depositing a capping layer to cover the first electrode; forming a second insulative film on portions of the substrate exposed through the first electrode and the capping layer; forming a second electrode disposed over the capping layer and portions of the second insulative film; removing portions of the second insulative film on either side of the second electrode; and implanting dopants in portions of the substrate exposed by the second insulative film to form a plurality of second impurity regions.
