17837314. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jiwoon Park of Suwon-si (KR)

Young-Geun Park of Suwon-si (KR)

Hojin Lee of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17837314 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a substrate, a contact structure, a bottom electrode, a dielectric layer, and a top electrode. The contact structure consists of a lower conductive pattern and an upper conductive pattern made of a nitride of a first metal implanted with a dopant.

• The semiconductor device includes a substrate, contact structure, bottom electrode, dielectric layer, and top electrode.
• The contact structure is composed of a lower conductive pattern and an upper conductive pattern.
• The upper conductive pattern is made of a nitride of a first metal implanted with a dopant.
• The bottom electrode is connected to the contact structure and is located on the substrate.
• The dielectric layer covers the bottom electrode and separates it from the top electrode.

Potential applications of this technology:

• Semiconductor devices used in electronic devices such as smartphones, tablets, and computers.
• Integrated circuits and microprocessors.
• Memory devices such as flash memory and DRAM.

Problems solved by this technology:

• Improved performance and reliability of semiconductor devices.
• Enhanced conductivity and electrical properties of the contact structure.
• Better isolation between the top and bottom electrodes.

Benefits of this technology:

• Increased efficiency and speed of electronic devices.
• Reduced power consumption and heat generation.
• Improved durability and lifespan of semiconductor devices.

Original Abstract Submitted

Disclosed is a semiconductor device comprising a substrate, a contact structure that penetrates the substrate, a bottom electrode on the substrate and connected to the contact structure, a dielectric layer that covers the bottom electrode, and a top electrode on the bottom electrode. The dielectric layer separates the top electrode from the bottom electrode. The contact structure includes a lower conductive pattern and an upper conductive pattern on the lower conductive pattern. The upper conductive pattern includes a nitride of a first metal implanted with a dopant.