17836628. FIN PROFILE MODULATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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FIN PROFILE MODULATION

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chih-Wei Chiang of Zhubei City (TW)

FIN PROFILE MODULATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17836628 titled 'FIN PROFILE MODULATION

Simplified Explanation

The abstract of this patent application describes a method for manufacturing fins for gate all-around field effect transistors (GAAFETs) with uniform profiles, regardless of size and pitch. This is achieved by controlling the fin height modulation using additional physical shaping operations and optimizing the fin profile from a tapered profile to a substantially uniform profile. The method involves stacking and refilling a flowable chemical vapor deposition (FCVD) film multiple times and using composition tuning during the FCVD process to further modulate the fin profiles.

  • The method allows for the manufacturing of fins for GAAFETs with uniform profiles.
  • The fin profile optimization is achieved by controlling the fin height modulation using additional physical shaping operations.
  • The method involves stacking and refilling a flowable chemical vapor deposition (FCVD) film multiple times.
  • Composition tuning during the FCVD process is used to further modulate the fin profiles.

Potential Applications

This technology has potential applications in the field of semiconductor manufacturing, specifically in the production of gate all-around field effect transistors (GAAFETs).

Problems Solved

The technology solves the problem of non-uniform fin profiles in GAAFETs, which can affect the performance and reliability of the transistors. By achieving substantially uniform profiles, the technology ensures consistent and reliable operation of GAAFETs.

Benefits

The benefits of this technology include:

  • Manufacturing fins for GAAFETs with uniform profiles, regardless of size and pitch.
  • Improved performance and reliability of GAAFETs due to the consistent and reliable operation of the transistors.


Original Abstract Submitted

Fins for use in gate all-around field effect transistors (GAAFETs) can be manufactured to have substantially uniform profiles, so the shapes of the fins are independent of size and pitch. Fin profile optimization from a tapered profile to a substantially uniform profile can be achieved via fin height control modulation using additional physical shaping operations to reduce pattern loading. These improvements in the fin profile can be accomplished by stacking and refilling a flowable chemical vapor deposition (FCVD) film multiple times and by using composition tuning during the FCVD process to further modulate fin profiles.

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