17831513. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seok Hoon Kim of Suwon-si (KR)
Yong Seung Kim of Seongnak-si (KR)
Dong Suk Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17831513 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes several fin-shaped patterns on a substrate, a field insulating layer between the fin-shaped patterns, a source/drain pattern connected to the fin-shaped patterns, and a sealing insulating pattern.
- The semiconductor device consists of multiple fin-shaped patterns arranged in a specific direction on a substrate.
- A field insulating layer covers the sidewalls of the fin-shaped patterns and is placed between them.
- A source/drain pattern is connected to the fin-shaped patterns on the field insulating layer.
- The source/drain pattern has bottom surfaces connected to the fin-shaped patterns and at least one connection surface linking the bottom surfaces.
- A sealing insulating pattern extends along the connection surface of the source/drain pattern and the upper surface of the field insulating layer.
- The source/drain pattern includes a silicon-germanium pattern that is doped with a p-type impurity.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be utilized in the manufacturing of integrated circuits and microprocessors.
- The device can be employed in the development of advanced sensors and detectors.
Problems solved by this technology:
- The fin-shaped patterns and the field insulating layer help in reducing leakage current and improving the performance of the semiconductor device.
- The sealing insulating pattern ensures better insulation and protection of the source/drain pattern.
- The use of a silicon-germanium pattern doped with a p-type impurity enhances the conductivity and efficiency of the device.
Benefits of this technology:
- The semiconductor device offers improved performance and reliability due to reduced leakage current.
- It provides better insulation and protection for the source/drain pattern, increasing the device's lifespan.
- The use of a silicon-germanium pattern doped with a p-type impurity enhances the conductivity, leading to faster and more efficient operation.
Original Abstract Submitted
A semiconductor device including: a plurality of fin-shaped patterns spaced apart from each other in a first direction and extending in a second direction on a substrate; a field insulating layer covering sidewalls of the plurality of fin-shaped patterns and disposed between the fin-shaped patterns; a source/drain pattern connected to the plurality of fin-shaped patterns on the field insulating layer, the source/drain pattern including bottom surfaces respectively connected to the fin-shaped patterns, and at least one connection surface connecting the bottom surfaces to each other; and a sealing insulating pattern extending along the connection surface of the source/drain pattern and an upper surface of the field insulating layer, wherein the source/drain pattern includes a silicon-germanium pattern doped with a p-type impurity.
