17822241. MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
MEMORY DEVICE
Organization Name
Inventor(s)
Byoung Kon Jo of suwon-si (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17822241 titled 'MEMORY DEVICE
Simplified Explanation
The abstract describes a memory device that includes a memory cell array, a three-phase word line controller, and a row decoder. The memory cell array consists of multiple memory cells connected to word lines and column lines. The three-phase word line controller generates different operating voltages for selected and unselected word lines. The row decoder applies the appropriate operating voltage to the activated and deactivated word lines based on a row address.
- The memory device has a memory cell array with multiple memory cells.
- The three-phase word line controller generates different operating voltages for selected and unselected word lines.
- The row decoder applies the appropriate operating voltage to the activated and deactivated word lines based on a row address.
Potential applications of this technology:
- Memory devices in computers, smartphones, and other electronic devices.
- Data storage in cloud computing and data centers.
- Embedded systems and IoT devices.
Problems solved by this technology:
- Efficient management of operating voltages in memory devices.
- Improved performance and reliability of memory cells.
- Reduction in power consumption and heat generation.
Benefits of this technology:
- Enhanced memory device performance and reliability.
- Lower power consumption and improved energy efficiency.
- Increased data storage capacity and faster data access.
Original Abstract Submitted
A memory device is provided that comprises: a memory cell array having a plurality of memory cells connected between a plurality of word lines and a plurality of column lines; a three-phase word line controller configured to generate a selected operating voltage, a first unselected operating voltage, and a second unselected operating voltage having a lower level than the first unselected operating voltage; and a row decoder connected to the plurality of word lines, configured to apply the selected operating voltage to an activated word line on the basis of a row address, and to apply the first unselected operating voltage or the second unselected operating voltage to a deactivated word line.
