17812005. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Heungsuk Oh of Bucheon-si (KR)
Sangwook Kim of Yongin-si (KR)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17812005 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of fabricating a semiconductor device using a curvilinear Optical Proximity Correction (OPC) method. The method involves performing an OPC step on a layout to generate a correction pattern with a curvilinear shape. This correction pattern is then used to generate mask data through a Mask Rule Check (MRC) step. Finally, a photoresist pattern is formed on a substrate using a photomask manufactured based on the mask data.
- The method involves using a curvilinear OPC method to fabricate a semiconductor device.
- An OPC step is performed on a layout to generate a correction pattern with a curvilinear shape.
- A Mask Rule Check (MRC) step is performed on the correction pattern to generate mask data.
- A photoresist pattern is formed on a substrate using a photomask manufactured based on the mask data.
Potential Applications
- Fabrication of semiconductor devices.
- Manufacturing of integrated circuits.
- Production of electronic components.
Problems Solved
- The curvilinear OPC method helps in achieving more precise and accurate fabrication of semiconductor devices.
- The MRC step ensures that the correction pattern satisfies the specifications of the mask rule for linewidth, improving the quality of the final product.
Benefits
- Improved accuracy and precision in the fabrication process.
- Enhanced quality of semiconductor devices.
- Increased efficiency in manufacturing integrated circuits.
Original Abstract Submitted
Provided is a method of fabricating a semiconductor device using a curvilinear OPC method. The method of fabricating the semiconductor device includes performing an optical proximity correction (OPC) step on a layout to generate a correction pattern, the correction pattern having a curvilinear shape, performing a mask rule check (MRC) step on the correction pattern to generate mask data, and forming a photoresist pattern on a substrate using a photomask, which is manufactured based on the mask data. The MRC step includes generating a width skeleton in the correction pattern, generating a width contour, which satisfies a specification of a mask rule for a linewidth, from the width skeleton, and adding the correction pattern and the width contour to generate an adjusting pattern.
