17807146. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
JINYOUNG Park of Anyang-si (KR)
Sangwuk Park of Hwaseong-si (KR)
Hyun-Chul Yoon of Seongnam-si (KR)
Jungpyo Hong of Gwangmyeong-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17807146 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The patent application describes a semiconductor memory device that includes active sections with impurity regions and a device isolation layer. Word lines extend on the active sections, and intermediate dielectric patterns cover the word lines. Bit-line structures are placed on the word lines, and contact plugs connect to the impurity regions. Data storage elements are located on the contact plugs. The intermediate dielectric pattern includes a capping part buried in the substrate and fence parts extending between the bit-line structures from the capping part.
- The semiconductor memory device includes active sections with impurity regions and a device isolation layer.
- Word lines extend on the active sections in a first direction.
- Intermediate dielectric patterns cover the top surfaces of the word lines.
- Bit-line structures are placed on the word lines in a second direction intersecting the first direction.
- Contact plugs connect to the second impurity regions.
- Data storage elements are located on the contact plugs.
- The intermediate dielectric pattern includes a capping part buried in the substrate.
- Fence parts extend between the bit-line structures from the capping part.
Potential Applications
- Semiconductor memory devices
- Integrated circuits
- Electronic devices
Problems Solved
- Efficient organization and storage of data in a semiconductor memory device
- Improved performance and reliability of memory devices
Benefits
- Enhanced data storage capacity
- Improved speed and efficiency of memory devices
- Increased reliability and durability of memory devices
Original Abstract Submitted
A semiconductor memory device includes active sections that include first and second impurity regions and are defined by a device isolation layer. Word lines extend in a first direction on the active sections. Intermediate dielectric patterns cover top surfaces of the word lines. Bit-line structures extend on the word lines in a second direction intersecting the first direction. Contact plugs are disposed between the bit-line structures and are connected to the second impurity regions. Data storage elements are disposed on the contact plugs. The intermediate dielectric pattern includes a capping part that covers the top surfaces of the word lines and is buried in the substrate. Fence parts extend between the bit-line structures from the capping part.
