17805702. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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INTEGRATED CIRCUIT DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Intak Jeon of Seoul (KR)

Hanjin Lim of Seoul (KR)

Hyungsuk Jung of Suwon-si (KR)

Jaehyoung Choi of Hwaseong-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17805702 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The abstract describes an integrated circuit device that includes a lower electrode, an insulating support pattern, a dielectric film, a high-k interface layer, and an upper electrode. The high-k interface layer includes a zirconium oxide layer and is arranged between the lower electrode and the dielectric film, as well as between the insulating support pattern and the dielectric film.

  • The integrated circuit device includes a lower electrode, insulating support pattern, dielectric film, high-k interface layer, and upper electrode.
  • The high-k interface layer contains a zirconium oxide layer.
  • The high-k interface layer is located between the lower electrode and the dielectric film, as well as between the insulating support pattern and the dielectric film.
  • The upper electrode is positioned adjacent to the lower electrode.
  • The high-k interface layer and the dielectric film are situated between the upper electrode and the lower electrode.

Potential Applications:

  • This integrated circuit device can be used in various electronic devices such as smartphones, computers, and tablets.
  • It can be utilized in memory devices, processors, and other components of electronic systems.

Problems Solved:

  • The high-k interface layer helps to improve the performance and efficiency of the integrated circuit device.
  • It addresses the issue of capacitance and leakage in the device, allowing for better signal transmission and reduced power consumption.

Benefits:

  • The use of a zirconium oxide layer in the high-k interface layer enhances the electrical properties of the device.
  • The improved performance and efficiency of the integrated circuit device lead to faster and more reliable electronic systems.
  • The reduction in power consumption contributes to energy savings and longer battery life in portable devices.


Original Abstract Submitted

An integrated circuit device includes: a lower electrode disposed on a substrate; an insulating support pattern supporting the lower electrode; a dielectric film surrounding the lower electrode and the insulating support pattern; a high-k interface layer arranged between the lower electrode and the dielectric film and between the insulating support pattern and the dielectric film, wherein the high-k interface layer contacts the insulating support pattern and includes a zirconium oxide layer; and an upper electrode disposed adjacent the lower electrode, wherein the high-k interface layer and the dielectric film are disposed between the upper electrode and the lower electrode.

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