17796647. DISPLAY SUBSTRATE AND DISPLAY DEVICE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)

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DISPLAY SUBSTRATE AND DISPLAY DEVICE

Organization Name

BOE TECHNOLOGY GROUP CO., LTD.

Inventor(s)

Cong Liu of Beijing (CN)

Yao Huang of Beijing (CN)

Binyan Wang of Beijing (CN)

Yu Wang of Beijing (CN)

Benlian Wang of Beijing (CN)

DISPLAY SUBSTRATE AND DISPLAY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17796647 titled 'DISPLAY SUBSTRATE AND DISPLAY DEVICE

Embodiments of the present disclosure provide a display substrate and a display device. The display substrate includes a base substrate, a driving circuit layer, a light-emitting structure layer, and a shield electrode layer.

  • The driving circuit layer is located on the base substrate.
  • The light-emitting structure layer is on a side of the driving circuit layer away from the base substrate and contains multiple light-emitting devices.
  • The shield electrode layer is on a side of the driving circuit layer close to the base substrate.
  • The driving circuit layer consists of pixel driving circuits, some of which are oxide thin film transistors, and some are low-temperature polycrystalline silicon thin film transistors.

Potential Applications: - This technology can be used in the manufacturing of high-quality displays for electronic devices. - It can enhance the performance and efficiency of display devices in various industries such as consumer electronics, automotive, and healthcare.

Problems Solved: - Improved display quality and efficiency. - Enhanced performance of electronic devices. - Cost-effective manufacturing processes for display substrates.

Benefits: - Higher resolution and brightness in displays. - Energy-efficient operation of display devices. - Cost savings in production processes.

Commercial Applications: Title: Advanced Display Substrate Technology for Enhanced Electronic Devices This technology can be utilized in the production of smartphones, tablets, TVs, and other electronic devices with display screens. It can lead to improved visual experiences for consumers and increased competitiveness for manufacturers in the electronics industry.

Prior Art: There have been advancements in display technologies, but the integration of oxide thin film transistors and low-temperature polycrystalline silicon thin film transistors in a display substrate is a novel approach that offers unique benefits.

Frequently Updated Research: Ongoing research focuses on optimizing the performance and durability of the display substrate technology, as well as exploring new applications in emerging industries such as augmented reality and virtual reality.

Questions about Display Substrate Technology:

Question 1: How does the integration of oxide thin film transistors and low-temperature polycrystalline silicon thin film transistors improve display performance? Answer: The combination of these transistor types enhances the efficiency and reliability of pixel driving circuits, resulting in better overall display quality.

Question 2: What are the key factors influencing the cost-effectiveness of manufacturing display substrates with this technology? Answer: Factors such as material costs, production processes, and scalability play a significant role in determining the cost-effectiveness of manufacturing display substrates using this technology.


Original Abstract Submitted

Embodiments of the present disclosure provide a display substrate and a display device. The display substrate includes a base substrate, a driving circuit layer on the base substrate, a light-emitting structure layer on a side of the driving circuit layer away from the base substrate, and a shield electrode layer on a side of the driving circuit layer proximal to the base substrate. The light-emitting structure layer includes a plurality of light-emitting devices. The driving circuit layer includes a plurality of pixel driving circuits. At least part of transistors in each of the pixel driving circuits are oxide thin film transistors, and at least part of transistors are low-temperature polycrystalline silicon thin film transistors.