17754779. POWER SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
Contents
POWER SEMICONDUCTOR DEVICE
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Yukimasa Hayashida of Fukuoka (JP)
POWER SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17754779 titled 'POWER SEMICONDUCTOR DEVICE
Simplified Explanation: The patent application describes a power semiconductor device that allows for a smaller module size by arranging emitter main electrodes and main electrode emitter sense terminals in a specific diagonal configuration.
Key Features and Innovation:
- Emitter main electrodes in multiple semiconductor chips
- Main electrode emitter sense terminals directly connected to the emitter main electrodes
- Diagonal placement of main electrode emitter sense terminals
- Specific distance relationships between the terminals and electrodes
Potential Applications: This technology can be applied in various power semiconductor devices, electronic modules, and systems requiring compact designs.
Problems Solved: The technology addresses the challenge of downsizing power semiconductor modules while maintaining efficient functionality and connectivity.
Benefits:
- Reduced module size
- Enhanced connectivity
- Improved efficiency in power semiconductor devices
Commercial Applications: The technology can be utilized in industries such as automotive, renewable energy, consumer electronics, and industrial automation for compact and efficient power management solutions.
Prior Art: Readers can explore prior art related to power semiconductor devices, compact module designs, and semiconductor electrode configurations to understand the novelty of this invention.
Frequently Updated Research: Stay updated on advancements in power semiconductor technology, compact module designs, and semiconductor electrode configurations to enhance the understanding and application of this innovation.
Questions about Power Semiconductor Devices: 1. How does the diagonal placement of main electrode emitter sense terminals contribute to downsizing the module? 2. What are the specific industries that can benefit the most from this compact power semiconductor technology?
Original Abstract Submitted
An object of the present invention is to provide a power semiconductor device enabling a downsizing of a module. A power semiconductor device according to the present invention includes: emitter main electrodes each provided in each of a plurality of semiconductor chips; and main electrode emitter sense terminals directly connected to each of the emitter main electrodes and partially exposed outside a module, wherein each of the main electrode emitter sense terminals is located diagonally to each other, and a distance from each of the main electrode emitter sense terminals to each of the emitter main electrodes connected to each of the main electrode emitter sense terminals is smaller than a distance between the main electrode emitter sense terminals in a plan view outside the module.
