17746737. METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH FLUORINE-CATCHING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH FLUORINE-CATCHING LAYER
Organization Name
Inventor(s)
KUO-HUI Su of TAIPEI CITY (TW)
METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH FLUORINE-CATCHING LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17746737 titled 'METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH FLUORINE-CATCHING LAYER
Simplified Explanation
The present disclosure describes a method for preparing a semiconductor device structure with a fluorine-catching layer. The method involves several steps, including:
- Forming a first dielectric layer over a semiconductor substrate.
- Creating a first conductive via structure in the first dielectric layer.
- Applying a second dielectric layer over the first dielectric layer to cover the first conductive via structure.
- Depositing a fluorine-catching layer over the second dielectric layer.
- Forming a third dielectric layer over the fluorine-catching layer.
- Creating a second conductive via structure in the third dielectric layer, the fluorine-catching layer, and the second dielectric layer.
Potential applications of this technology include:
- Semiconductor manufacturing: This method can be used in the production of semiconductor devices, such as integrated circuits, to improve their performance and reliability.
- Electronics industry: The semiconductor devices prepared using this method can be used in various electronic devices, such as smartphones, computers, and televisions.
The problems solved by this technology are:
- Fluorine contamination: The fluorine-catching layer helps to prevent fluorine atoms from diffusing into the semiconductor device structure, which can cause device failure or degradation.
- Dielectric layer protection: The fluorine-catching layer acts as a protective barrier for the underlying dielectric layers, preventing damage or degradation during subsequent processing steps.
The benefits of this technology include:
- Enhanced device performance: By preventing fluorine contamination, the semiconductor device structure can maintain its intended electrical properties, leading to improved device performance.
- Increased device reliability: The fluorine-catching layer helps to protect the dielectric layers, reducing the risk of device failure or degradation over time.
- Simplified manufacturing process: The method described in this disclosure can be integrated into existing semiconductor manufacturing processes, minimizing the need for significant process modifications.
Original Abstract Submitted
The present disclosure provides a method for preparing a semiconductor device structure with a fluorine-catching layer. The method includes forming a first dielectric layer over a semiconductor substrate, and forming a first conductive via structure in the first dielectric layer. The method also includes forming a second dielectric layer over the first dielectric layer and covering the first conductive via structure, and forming a fluorine-catching layer over the second dielectric layer. The method further includes forming a third dielectric layer over the fluorine-catching layer, and forming a second conductive via structure in the third dielectric layer, the fluorine-catching layer, and the second dielectric layer.
