17736367. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyung Soo Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17736367 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes lower and upper nanosheets, gate electrodes, and source/drain regions. The second lower source/drain region is longer than the second upper source/drain region.
- The semiconductor device includes lower and upper nanosheets, gate electrodes, and source/drain regions.
- The lower nanosheets are positioned below the upper nanosheets.
- Gate electrodes are located on the substrate and surround each of the nanosheets.
- There are first and second lower source/drain regions on opposite sides of the gate electrodes.
- There are also first and second upper source/drain regions on top of the first and second lower source/drain regions, respectively.
- The second lower source/drain region is longer than the second upper source/drain region.
Potential Applications
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be applied in the manufacturing of integrated circuits and microprocessors.
Problems Solved
- The design of the semiconductor device addresses the need for efficient and compact electronic components.
- It solves the problem of optimizing the performance and functionality of semiconductor devices.
Benefits
- The use of nanosheets and gate electrodes improves the performance and efficiency of the semiconductor device.
- The longer second lower source/drain region allows for better control of the electrical properties of the device.
- The design enables higher integration density and improved functionality in electronic devices.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes: lower nanosheets; upper nanosheets on the lower nanosheets; gate electrodes on the substrate and provided around each of the nanosheets; a first lower source/drain region on a first side of the first and second gate electrodes; a second lower source/drain region on a second side of the first and second gate electrodes; a first upper source/drain region on the first lower source/drain region; and a second upper source/drain region on the second lower source/drain region. A first length of the second lower source/drain region is greater than a second length of the second upper source/drain region.
