17733143. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
EUNSIL Park of Hwaseong-si (KR)
WANGSEOP Lim of Cheonan-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17733143 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes multiple active patterns and gate electrodes on a substrate. The device also includes separation patterns and a gate insulating layer.
- The semiconductor device has three active patterns on a logic cell region of a substrate, spaced apart from each other in a first direction.
- Two gate electrodes are present, with the first gate electrode crossing the first active pattern and the second gate electrode crossing the second active pattern.
- Separation patterns are provided between the active patterns, with the first separation pattern wider than the second separation pattern.
- A gate insulating layer is present between the first gate electrode and the first active pattern.
- A gate cutting pattern is interposed between the two gate electrodes and in contact with the top surface of the first separation pattern.
- The gate insulating layer extends between the first gate electrode and the first separation pattern, contacting the side and top surfaces of the first separation pattern.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be utilized in integrated circuits for improved performance and functionality.
Problems solved by this technology:
- The device provides a structure that allows for efficient separation and insulation between active patterns and gate electrodes.
- It ensures proper functioning and prevents interference between different components.
Benefits of this technology:
- The semiconductor device offers improved reliability and performance due to the optimized layout and insulation.
- It allows for better integration of multiple components on a substrate, leading to compact and efficient electronic devices.
Original Abstract Submitted
A semiconductor device is provided. The semiconductor device includes: first, second and third active patterns on a logic cell region of a substrate and are spaced apart from each other in a first direction; first and second gate electrodes, the first gate electrode crossing the first active pattern and the second gate electrode crossing the second active pattern; a first separation pattern provided between the first and second active patterns; a second separation pattern provided between the second and third active patterns; a first gate insulating layer interposed between the first gate electrode and the first active pattern; and a first gate cutting pattern interposed between the first and second gate electrodes, and in contact with a top surface of the first separation pattern. The first separation pattern is wider than the second separation pattern, and the first gate insulating layer extends between the first gate electrode and the first separation pattern, and contacts side and top surfaces of the first separation pattern.
