17732811. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sechan Lim of Boryeong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17732811 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device that includes multiple active regions, insulating structures, channel layers, gate structures, and source/drain regions. The insulating structures extend along the side surfaces of the source/drain regions.
- The semiconductor device has first and second active regions on a substrate.
- Insulating structures are present on the first and second active regions.
- Channel layers are vertically stacked on each of the insulating structures.
- Gate structures intersect the first and second active regions and surround the channel layers.
- Source/drain regions, doped with different impurities, are on the sides of the gate structures and contact the channel layers.
- The insulating structures extend upwardly along the side surfaces of the source/drain regions.
Potential Applications
- This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in the manufacturing of integrated circuits and microprocessors.
Problems Solved
- The device solves the problem of efficiently integrating multiple active regions and insulating structures on a substrate.
- It addresses the need for precise control and contact between the source/drain regions and the channel layers.
Benefits
- The device allows for improved performance and functionality of electronic devices.
- It enables better control over the flow of current in the semiconductor device.
- The extended insulating structures provide enhanced isolation and protection for the source/drain regions.
Original Abstract Submitted
A semiconductor device may include first and second active regions on a substrate, first and second insulating structures on the first and second active regions, respectively, vertically stacked channel layers on each of the first and second insulating structures, first and second gate structures intersecting the first and second active regions, respectively, and surrounding the channel layers, first and second source/drain regions doped with different conductivity-type impurities, the first and second source/drain regions being on sides of the first and second gate structures, respectively, and contacting the channel layers, and at least a portion of each of the first and second insulating structures extending upwardly along a side surface of a corresponding one of the first and second source/drain regions.
