17712726. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Seunggwang Kim of Suwon-si (KR)
Sangkoo Kang of Yongin-si (KR)
Koungmin Ryu of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17712726 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor device that includes a gate structure with a gate electrode, a gate spacer layer, and a gate capping layer. It also includes a source/drain region, a contact plug, and insulating films that define an air gap.
- The gate structure of the semiconductor device includes a gate electrode, a gate spacer layer, and a gate capping layer.
- The source/drain region is located on at least one side of the gate structure.
- A contact plug is placed on the source/drain region.
- First and second insulating films are present between the contact plug and the gate structure, creating an air gap.
- The first insulating film has a first surface and a second surface that forms a first angle.
- The second insulating film has a third surface that forms a second angle with the first surface of the first insulating film.
- The second angle is narrower than the first angle, and the air gap is defined by the first surface, the second surface, and the third surface.
Potential Applications
- Semiconductor manufacturing
- Electronics industry
Problems Solved
- Improved performance and efficiency of semiconductor devices
- Enhanced insulation and protection of components
Benefits
- Better control of electrical properties
- Reduced leakage and interference
- Increased device reliability and lifespan
Original Abstract Submitted
A semiconductor device includes a gate structure including a gate electrode, a gate spacer layer on a side surface of the gate electrode, and a gate capping layer on the gate electrode. Moreover, the semiconductor device includes a source/drain region on at least one side of the gate structure, a contact plug on the source/drain region, and first and second insulating films between the contact plug and the gate structure and defining an air gap. The first insulating film includes a first surface, and a second surface extending from the first surface while forming a first angle. The second insulating film includes a third surface forming a second angle with the first surface of the first insulating film. The second angle is an acute angle narrower than the first angle. The air gap is defined by the first surface, the second surface, and the third surface.
