17699496. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Junghwan Chun of Anyang-si (KR)
Kyeongbeom Park of Suwon-si (KR)
Suhyun Bark of Seongnam-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17699496 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with multiple layers and components that are electrically connected to each other. Here is a simplified explanation of the abstract:
- The semiconductor device has a substrate with an active region.
- It includes two insulating layers, with an etch stop layer in between.
- There is a via contact in the first insulating layer, which is connected to the active region.
- An interconnection electrode is present in the second insulating layer, which is connected to the via contact.
- A conductive barrier layer is on the side and lower surfaces of the interconnection electrode, extending partially to a side surface of the via contact.
- A side insulating layer is on the side region of the via contact, below the extension of the conductive barrier layer.
- The side insulating layer has the same material as the etch stop layer.
Potential applications of this technology:
- Semiconductor devices used in electronic devices such as smartphones, computers, and tablets.
- Integrated circuits and microprocessors.
- Power electronics and energy conversion systems.
Problems solved by this technology:
- Provides improved electrical connections between different layers and components in a semiconductor device.
- Reduces the risk of short circuits and other electrical issues.
- Enhances the overall performance and reliability of the semiconductor device.
Benefits of this technology:
- Improved electrical connectivity and signal transmission within the semiconductor device.
- Enhanced reliability and performance of the device.
- Reduced risk of electrical failures and malfunctions.
- Enables the development of more advanced and efficient electronic devices.
Original Abstract Submitted
A semiconductor device includes a substrate having an active region, a first insulating layer on the substrate, a second insulating layer on the first insulating layer, an etch stop layer between the first insulating layer and the second insulating layer, a via contact in the first insulating layer and electrically connected to the active region, an interconnection electrode in the second insulating layer and electrically connected to the via contact, a conductive barrier layer on a side surface and a lower surface of the interconnection electrode and having an extension portion extending to a partial region of a side surface of the via contact, and a side insulating layer on a side region of the via contact below the extension portion of the conductive barrier layer, the side insulating layer including the same material as a material of the etch stop layer.
