17697400. VERTICAL CHANNEL TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
VERTICAL CHANNEL TRANSISTOR
Organization Name
Inventor(s)
Kyung-Eun Byun of Seongnam-si (KR)
Keunwook Shin of Yongin-si (KR)
Changseok Lee of Gwacheon-si (KR)
VERTICAL CHANNEL TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17697400 titled 'VERTICAL CHANNEL TRANSISTOR
Simplified Explanation
The abstract describes a vertical channel transistor design that includes various components such as source/drain electrodes, channel patterns, gate electrodes, gate insulation layers, and graphene insertion layers.
- The transistor has a first source/drain electrode and a second source/drain electrode, which are separated in a specific direction.
- A channel pattern is present between the first and second source/drain electrodes.
- A gate electrode is located on the side surface of the channel pattern.
- A gate insulation layer is positioned between the channel pattern and the gate electrode.
- A graphene insertion layer is placed between the first source/drain electrode and the channel pattern.
Potential Applications
- This technology can be used in various electronic devices that require efficient and high-performance transistors, such as smartphones, tablets, and computers.
- It can also find applications in power electronics, integrated circuits, and other semiconductor devices.
Problems Solved
- The vertical channel transistor design addresses the need for improved transistor performance and efficiency.
- It solves the problem of limited scalability and miniaturization of transistors by providing a compact and efficient design.
Benefits
- The use of a graphene insertion layer enhances the performance and efficiency of the transistor.
- The vertical channel design allows for better control of the transistor's characteristics and improves its overall performance.
- The compact design enables higher integration density and improved functionality in electronic devices.
Original Abstract Submitted
A vertical channel transistor includes a first source/drain electrode; a second source/drain electrode spaced apart from the first source/drain electrode in a first direction; a first channel pattern between the first source/drain electrode and the second source/drain electrode; a first gate electrode on a side surface of the first channel pattern; a first gate insulation layer between the first channel pattern and the first gate electrode; and a first graphene insertion layer between the first source/drain electrode and the first channel pattern.
