17697386. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

NON-VOLATILE MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Bongsoon Lim of Seoul (KR)

Hyunggon Kim of Hwaseong-si (KR)

NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17697386 titled 'NON-VOLATILE MEMORY DEVICE

Simplified Explanation

The patent application describes a non-volatile memory device that consists of a memory cell region and a peripheral circuit region. The memory cell region includes an upper substrate, channel structures, and a first upper metal line. The peripheral circuit region includes a first lower metal line, a first via structure, and a second via structure.

• The memory cell region is located above the peripheral circuit region in a vertical direction.
• The first upper metal line extends in a first direction within the memory cell region.
• The first lower metal line extends in a second direction within the peripheral circuit region.
• The first via structure and the second via structure are both on the first lower metal line, with the top surface of the second via in contact with the upper substrate.
• A first through-hole via structure passes through the upper substrate and the first via structure, connecting the first upper metal line to the first lower metal line.
• The first upper metal line is electrically connected to the upper substrate through the first through-hole via structure, the first lower metal line, and the second via structure.

Potential Applications:

• Non-volatile memory devices for various electronic devices such as smartphones, tablets, and computers.
• Storage devices for data centers and servers.
• Embedded memory in integrated circuits for various applications.

Problems Solved:

• Provides a structure for a non-volatile memory device that allows for efficient electrical connections between different regions.
• Enables vertical integration of memory cell and peripheral circuit regions, saving space and improving performance.
• Facilitates reliable data storage and retrieval in non-volatile memory devices.

Benefits:

• Compact design allows for more efficient use of space in electronic devices.
• Improved performance and reliability of non-volatile memory devices.
• Enables higher storage capacity in a smaller form factor.
• Cost-effective manufacturing process for non-volatile memory devices.

Original Abstract Submitted

A non-volatile memory device includes a memory cell region and a peripheral circuit region below the memory cell region in a vertical direction. The memory cell region includes an upper substrate, channel structures extending in the vertical direction, and a first upper metal line extending in a first direction. The peripheral circuit region includes a first lower metal line extending in a second direction and a first via structure on the first lower metal line and a second via structure on the first lower metal line, a top surface of the second via being in contact with the upper substrate. The memory cell region further includes a first through-hole via structure passing through the upper substrate and the first via structure, and electrically connecting the first upper metal line to the first lower metal line; and the first upper metal line is electrically connected to the upper substrate through the first through-hole via structure, the first lower metal line, and the second via structure.