17460213. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Kuei-Yu Kao of Hsinchu City (TW)
Chao-Cheng Chen of Hsinchu City (TW)
Chih-Han Lin of Hsinchu City (TW)
Chen-Ping Chen of Toucheng Township (TW)
Ming-Ching Chang of Hsinchu City (TW)
Shih-Yao Lin of New Taipei City (TW)
Chih-Chung Chiu of Hsinchu City (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17460213 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The abstract describes a semiconductor device that consists of multiple layers stacked vertically. The device includes a gate structure with a lower portion that wraps around each layer and an upper portion. A gate spacer extends along the sidewall of the upper portion and has a bottom surface. The bottom surface of the gate spacer and the top surface of the topmost layer form an angle less than 90 degrees.
- The semiconductor device has multiple vertically separated semiconductor layers.
- The gate structure of the device has a lower portion that wraps around each layer.
- The gate structure also has an upper portion.
- A gate spacer extends along the sidewall of the upper portion.
- The gate spacer has a bottom surface.
- The bottom surface of the gate spacer and the top surface of the topmost layer form an angle less than 90 degrees.
Potential Applications
- This technology can be used in the manufacturing of semiconductor devices.
- It can be applied in the development of advanced electronic devices and integrated circuits.
Problems Solved
- The design of the semiconductor device allows for better control and performance.
- The gate structure wrapping around each layer improves the efficiency of the device.
- The gate spacer provides additional stability and precision in the device's operation.
Benefits
- The vertical separation of semiconductor layers allows for compact and efficient device design.
- The gate structure and spacer enhance the performance and reliability of the device.
- The angle formed between the gate spacer and the top layer improves the functionality of the device.
Original Abstract Submitted
A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Kuei-Yu Kao of Hsinchu City (TW)
- Chao-Cheng Chen of Hsinchu City (TW)
- Chih-Han Lin of Hsinchu City (TW)
- Chen-Ping Chen of Toucheng Township (TW)
- Ming-Ching Chang of Hsinchu City (TW)
- Shih-Yao Lin of New Taipei City (TW)
- Chih-Chung Chiu of Hsinchu City (TW)
- H01L29/423
- H01L29/66
- H01L29/786
- H01L21/8234
- H01L29/06