17454203. COMB / FISHBONE METAL STACK simplified abstract (QUALCOMM Incorporated)
Contents
COMB / FISHBONE METAL STACK
Organization Name
Inventor(s)
Thomas Hua-Min Williams of Irvine CA (US)
Matthew Chauncey Kusbit of Santee CA (US)
Luis Chen of Chula Vista CA (US)
Keyurkumar Karsanbhai Kansagra of Bangalore (IN)
Smeeta Heggond of Bagalkot (IN)
COMB / FISHBONE METAL STACK - A simplified explanation of the abstract
This abstract first appeared for US patent application 17454203 titled 'COMB / FISHBONE METAL STACK
Simplified Explanation
The patent application describes an integrated circuit (IC) that includes a set of MOS transistors and interconnect structures.
- The IC has a first set of MOS transistors with a common source/drain terminal A, a gate, and a source/drain terminal B.
- The IC also includes a first plurality of interconnect stacks connected to the source/drain terminal A, extending in a second direction over the MOS transistors, and consisting of consecutive metal layer interconnects.
- Additionally, the IC has a first comb interconnect structure extending in a first direction orthogonal to the second direction. The comb structure has fingers that extend in the second direction over the MOS transistors and the interconnect stacks. The comb structure is connected to the interconnect stacks.
Potential applications of this technology:
- Integrated circuits and semiconductor devices
- Electronics manufacturing and design
- Computer processors and memory chips
Problems solved by this technology:
- Efficient routing and connection of interconnects in an integrated circuit
- Reduction of signal interference and crosstalk between interconnects
- Improved performance and reliability of ICs
Benefits of this technology:
- Enhanced integration and compactness of ICs
- Improved signal transmission and speed
- Higher density of interconnects and functionality in a given area
Original Abstract Submitted
An IC includes a first set of MOS transistors configured to have a common first transistor source/drain terminal A, a first transistor gate, and a first transistor source/drain terminal B. In addition, the IC includes a first plurality of interconnect stacks coupled to the first transistor source/drain terminal A. Each interconnect stack of the first plurality of interconnect stacks extends in a second direction over at least a portion of the first set of MOS transistors and includes consecutive metal layer interconnects. Further, the IC includes a first comb interconnect structure extending in a first direction orthogonal to the second direction, with comb fingers extending in the second direction over at least a portion of the first set of MOS transistors and the first plurality of interconnect stacks. The first comb interconnect structure is coupled to the first plurality of interconnect stacks.
