17383435. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yu-Feng Yin of Hsinchu County (TW)

Chia-Jung Yu of Hsinchu (TW)

Pin-Cheng Hsu of Hsinchu County (TW)

Chung-Te Lin of Tainan City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17383435 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes a transistor with various components such as a gate electrode, channel layer, gate dielectric layer, source/drain regions, and a dielectric pattern. The first source/drain region covers a sidewall and surface of the dielectric pattern, while the second sidewall of the dielectric pattern protrudes from the first source/drain region's sidewall.

• The semiconductor device includes a transistor with a gate electrode, channel layer, gate dielectric layer, source/drain regions, and a dielectric pattern.
• The gate electrode is located beneath the channel layer, and the gate dielectric layer is positioned between the gate electrode and the channel layer.
• The source/drain regions are situated on opposite sides of the gate electrode on the channel layer.
• A dielectric pattern is present on the channel layer, with the first source/drain region covering one sidewall and surface of the dielectric pattern.
• The second sidewall of the dielectric pattern protrudes from the sidewall of the first source/drain region.

Potential Applications

• This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
• It can be utilized in integrated circuits for improved performance and functionality.

Problems Solved

• The design of this semiconductor device addresses the need for efficient and reliable transistor operation.
• It solves the problem of maintaining proper electrical connections and insulation between different components of the transistor.

Benefits

• The inclusion of the dielectric pattern and specific arrangement of the source/drain regions enhance the performance and functionality of the transistor.
• This design allows for improved control and efficiency in electronic devices.
• It provides better insulation and electrical connections, leading to increased reliability and longevity.

Original Abstract Submitted

A semiconductor device includes a transistor. The transistor includes a gate electrode, a channel layer, a gate dielectric layer, a first source/drain region and a second source/drain region and a dielectric pattern. The channel layer is disposed on the gate electrode. The gate dielectric layer is located between the channel layer and the gate electrode. The first source/drain region and the second source/drain region are disposed on the channel layer at opposite sides of the gate electrode. The dielectric pattern is disposed on the channel layer. The first source/drain region covers a first sidewall and a first surface of the dielectric pattern, and a second sidewall opposite to the first sidewall of the dielectric pattern is protruded from a sidewall of the first source/drain region.