US Patent Application 18446539. METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE simplified abstract
Contents
METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==
[[Category:Eric Peng of Hsinchu City (TW)]]
[[Category:Chao-Cheng Chen of Hsin-Chu City (TW)]]
[[Category:Chii-Horng Li of Hsinchu (TW)]]
[[Category:Ming-Hua Yu of Hsinchu City (TW)]]
[[Category:Shih-Hao Lo of Hsinchu County (TW)]]
[[Category:Syun-Ming Jang of Hsin-Chu (TW)]]
[[Category:Tze-Liang Lee of Hsinchu (TW)]]
[[Category:Ying-Hao Hsieh of Hsinchu (TW)]]
METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446539 titled 'METHOD OF FABRICATING A SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a device that includes a gate stack and spacers on a semiconductor substrate.
- The gate stack is surrounded by spacers on its sidewalls.
- A recess is formed in the semiconductor substrate next to the gate stack.
- The recess has two profiles - a first profile with vertical sidewalls and a second profile below the first profile.
- The second profile is wider within the semiconductor substrate than the first profile, creating a bottle-neck shape.
- The recess is filled with a semiconductor material.
- Additional spacers are placed on the semiconductor substrate next to the recess.
Original Abstract Submitted
A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the semiconductor substrate adjacent the gate stack. The recess has a first profile having substantially vertical sidewalls and a second profile contiguous with and below the first profile. The first and second profiles provide a bottle-neck shaped profile of the recess in the semiconductor substrate, the second profile having a greater width within the semiconductor substrate than the first profile. The recess is filled with a semiconductor material. A pair of spacers are disposed overly the semiconductor substrate adjacent the recess.