US Patent Application 18446326. GATE CONTACT STRUCTURE simplified abstract

GATE CONTACT STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Cheng-Chi Chuang of New Taipei City (TW)]]

[[Category:Huan-Chieh Su of Changhua County (TW)]]

[[Category:Sheng-Tsung Wang of Hsinchu (TW)]]

[[Category:Lin-Yu Huang of Hsinchu (TW)]]

[[Category:Chih-Hao Wang of Hsinchu County (TW)]]

GATE CONTACT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446326 titled 'GATE CONTACT STRUCTURE

Simplified Explanation

The patent application describes semiconductor structures and methods for their formation.

• The semiconductor structure includes an active region, a gate structure, and a gate contact.
• The active region is located on a substrate.
• The gate structure is positioned over the active region.
• The gate contact consists of a lower portion and an upper portion.
• The lower portion is placed over the gate structure.
• The upper portion is positioned over the lower portion.

Original Abstract Submitted

Semiconductor structures and methods of forming the same are provided. In one embodiment, a semiconductor structure includes an active region over a substrate, a gate structure disposed over the active region, and a gate contact that includes a lower portion disposed over the gate structure and an upper portion disposed over the lower portion.