US Patent Application 18359954. Mask Defect Prevention simplified abstract

Mask Defect Prevention

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chi-Ta Lu of Yilan County (TW)

Chih-Chiang Tu of Tauyen (TW)

Cheng-Ming Lin of Yunlin County (TW)

Ching-Yueh Chen of Hsinchu (TW)

Wei-Chung Hu of Hsinchu (TW)

Ting-Chang Hsu of Hsinchu (TW)

Yu-Tung Chen of Hsinchu (TW)

Mask Defect Prevention - A simplified explanation of the abstract

This abstract first appeared for US patent application 18359954 titled 'Mask Defect Prevention

Simplified Explanation

- The abstract describes a photolithographic mask assembly that is used in the process of creating microchips. - The assembly includes a photolithographic mask, which is a tool used in the semiconductor industry for transferring patterns onto a substrate. - The mask has a capping layer and an absorber layer, which are important components for the mask's functionality. - The absorber layer has different areas, including a first main feature area, a second main feature area, and a venting feature area. - The venting feature area is located between the first and second main feature areas and is designed to allow for the release of gases during the photolithographic process. - The venting feature area includes multiple venting features, which help in the efficient release of gases. - This innovation in the design of the photolithographic mask assembly improves the overall performance and accuracy of the photolithographic process. - The improved venting feature area helps in reducing defects and improving the quality of the patterns transferred onto the substrate. - This patent application aims to protect the unique design and functionality of this photolithographic mask assembly.

Original Abstract Submitted

A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.