US Patent Application 18356388. WAFER THINNING METHOD HAVING FEEDBACK CONTROL simplified abstract
Contents
WAFER THINNING METHOD HAVING FEEDBACK CONTROL
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yuan-Hsuan Chen of Tainan City (TW)
Kei-Wei Chen of Tainan City (TW)
Ying-Lang Wang of Tien-Chung Village (TW)
Kuo-Hsiu Wei of Tainan City (TW)
WAFER THINNING METHOD HAVING FEEDBACK CONTROL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18356388 titled 'WAFER THINNING METHOD HAVING FEEDBACK CONTROL
Simplified Explanation
The patent application describes a method for thinning a wafer.
- The initial thickness of the wafer is measured.
- A polishing time is calculated based on the initial thickness.
- The wafer is polished for the calculated polishing time to obtain a polished wafer.
- The polished thickness of the polished wafer is measured.
- An etching time is calculated based on the polished thickness.
- The polished wafer is etched for the calculated etching time to obtain an etched wafer.
- The etched wafer has a total thickness variation of less than or equal to 0.15 μm.
Original Abstract Submitted
A method of thinning a wafer includes measuring an initial thickness of the wafer. The method further includes calculating a polishing time using the initial thickness. The method further includes polishing the wafer for a first duration equal to the polishing time to obtain a polished wafer. The method further includes measuring a polished thickness of the polished wafer. The method further includes calculating an etching time using the polished thickness. The method further includes etching the polished wafer for a second duration equal to the etching time to obtain an etched wafer, wherein the wafer has a total thickness variation of less than or equal to 0.15 μm after etching the polished wafer.