US Patent Application 18355796. GATE AIR SPACER PROTECTION DURING SOURCE/DRAIN VIA HOLE ETCHING simplified abstract
Contents
GATE AIR SPACER PROTECTION DURING SOURCE/DRAIN VIA HOLE ETCHING
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Kuo-Chiang Tsai of Hsinchu City (TW)
Jyh-Huei Chen of Hsinchu City (TW)
GATE AIR SPACER PROTECTION DURING SOURCE/DRAIN VIA HOLE ETCHING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355796 titled 'GATE AIR SPACER PROTECTION DURING SOURCE/DRAIN VIA HOLE ETCHING
Simplified Explanation
The patent application describes a semiconductor device with a gate, source/drain, and conductive contact.
- Gate is a component that controls the flow of electricity in the device.
- Source/drain is a region in the substrate where current enters or exits the device.
- Conductive contact is a structure that allows for electrical connection to the source/drain.
- An air spacer is placed between the gate and the conductive contact.
- The air spacer helps to improve the performance and efficiency of the device.
- A first component is placed over the gate, which could be another layer or structure.
- A second component is placed over the air spacer, which is different from the first component.
- The second component could be a different material or have a different function.
- This arrangement of components allows for improved functionality and performance of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a gate disposed over a substrate. A source/drain is disposed in the substrate. A conductive contact is disposed over the source/drain. An air spacer is disposed between the gate and the conductive contact. A first component is disposed over the gate. A second component is disposed over the air spacer. The second component is different from the first component.