Tokyo electron limited (20240242937). PLASMA PROCESSING APPARATUS simplified abstract
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PLASMA PROCESSING APPARATUS
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PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240242937 titled 'PLASMA PROCESSING APPARATUS
The abstract describes a plasma processing apparatus that includes a chamber with a processing space, a substrate support, an upper electrode, an emitter, and a waveguide for supplying electromagnetic waves to the emitter.
- The apparatus includes an emitter that emits electromagnetic waves into a plasma generation space.
- The waveguide supplies the electromagnetic waves to the emitter through a resonator with a waveguide path.
- The resonator has short-circuiting portions at each end of the waveguide path, with the second end short-circuiting the waveguide path at the frequency of the electromagnetic waves.
- The second short-circuiting portion has a capacitance that facilitates the short-circuiting of the waveguide path.
- The emitter is electromagnetically coupled to the second end of the waveguide path.
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface modification processes
Problems Solved: - Efficient plasma generation - Precise control of plasma parameters - Enhanced substrate processing
Benefits: - Improved processing uniformity - Higher processing speeds - Reduced energy consumption
Commercial Applications: Plasma processing equipment manufacturers can integrate this technology into their systems to offer more advanced and efficient solutions to semiconductor and electronics industries.
Questions about Plasma Processing Apparatus: 1. How does the resonator in the waveguide contribute to the efficiency of plasma generation? 2. What specific advantages does the electromagnetic coupling between the emitter and the waveguide provide in this apparatus?
Original Abstract Submitted
a plasma processing apparatus includes: a chamber having a processing space therein; a substrate support provided inside the processing space; an upper electrode provided above the substrate support with the processing space interposed therebetween; an emitter provided to emit electromagnetic waves into a plasma generation space and extending in a circumferential direction around a central axis of the chamber and the processing space; and a waveguide configured to supply the electromagnetic waves to the emitter; wherein the waveguide includes a resonator having a waveguide path therein, wherein the resonator includes a first short-circuiting portion constituting a first end of the waveguide path and a second short-circuiting portion constituting a second end of the waveguide path, wherein the second end of the waveguide path is electromagnetically coupled to the emitter, and wherein the second short-circuiting portion has a capacitance that short-circuits the waveguide path at a frequency of the electromagnetic waves.
